? 1998,2000 mos field effect transistor 2SK3108 switching n-channel power mos fet industrial use document no. d13331ej1v0ds00 (1st edition) date published january 2000 ns cp (k) printed in japan data sheet the mark h shows major revised points. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. description the 2SK3108 is n channel mos fet device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as dc/dc converter. features gate voltage rating 30 v low on-state resistance r ds(on) = 0.4 w max. (v gs = 10 v, i d = 4.0 a) low input capacitance c iss = 400 pf typ. (v ds = 10 v, v gs = 0 v) avalanche capability rated built-in gate protection diode isolated to-220 package absolute maximum rating (t a = 25 c ) drain to source voltage (v gs = 0 v) v dss 200 v gate to source voltage (v ds = 0 v) v gss 30 v drain current(dc) (t c = 25c) i d(dc) 8.0 a drain current(pulse) note1 i d(pulse) 24 a total power dissipation (t a = 25c) p t1 2.0 w total power dissipation (t c = 25c) p t2 25 w channel temperature t ch 150 c storage temperature t stg - 55 to +150 c single avalanche current note2 i as 8.0 a single avalanche energy note2 e as 51 mj note1. pw 10 m s, duty cycle 1% 2. starting t ch = 25c, v dd = 100 v, r g = 25 w , v gs = 20 v ? 0 v ordering information part number package 2SK3108 isolated to-220
data sheet d13331ej1v0ds00 2 2SK3108 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit drain leakage current i dss v ds = 200 v, v gs = 0 v 100 m a gate leakage current i gss v gs = 30 v, v ds = 0 v 10 m a gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 4.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 4.0 a 1.5 s drain to source on-state resistance r ds(on) v gs = 10 v, i d = 4.0 a 0.32 0.4 w input capacitance c iss v ds = 10 v 400 pf output capacitance c oss v gs = 0 v 110 pf reverse transfer capacitance c rss f = 1 mhz 55 pf turn-on delay time t d(on) v dd = 100 v, i d = 4.0 a 12 ns rise time t r v gs(on) = 10 v 25 ns turn-off delay time t d(off) r g = 10 w 40 ns fall time t f 20 ns total gate charge q g v dd = 160 v 18 nc gate to source charge q gs v gs = 10 v 3.5 nc gate to drain charge q gd i d = 8.0 a 10 nc diode forward voltage v f(s-d) i f = 8.0 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 8.0 a, v gs = 0 v 250 ns reverse recovery charge q rr di/dt = 50 a/ m s 1.0 m c test circuit 3 gate charge v gs = 20 ? 0 v pg. r g = 25 w 50 w d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 w d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 t = 1 m s duty cycle 1 % t v gs wave form i d wave form v gs i d 10 % 0 0 90 % 90 % 90 % v gs(on) i d t on t off t d(on) t r t d(off) t f 10 %10 % h
data sheet d13331ej1v0ds00 3 2SK3108 typical characteristics (t a = 25c) drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 30 25 20 15 10 5 0 pulsed 0 2 4 68 10 12 14 16 18 20 22 24 26 28 30 v gs = 10 v v gs = 30 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 100 10 1 0.1 0.01 0.001 pulsed 0 v ds = 10 v 1 2 34 5 67 8 910 11 12 t ch =125?c 75?c 25?c -25?c 13 14 15 16 gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma - 50 50 100 0 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 - 25 25 75 125 forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s 0.1 10 1 0.1 0.01 1 100 0.01 10 v ds =10 v pulsed t ch = -25?c t ch = 25?c t ch = 75?c t ch = 125?c pulsed drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - w 1.0 0.8 0.6 0.4 0.2 0 0 24 6 810 12 14 16 18 20 i d = 8.0 a 4.0 a 1.6 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - w 1 10 100 pulsed 1.0 0.8 0.6 0.4 0.2 0 0.1 v gs = 10 v v gs = 30 v h
data sheet d13331ej1v0ds00 4 2SK3108 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - w 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 50 100 0 150 - 25 25 75 125 i d = 4.0 a v gs = 10 v pulsed i d = 8.0 a source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 0.0 100 10 1 0.1 0.4 1.0 1.2 pulsed 0.2 0.6 0.8 1.4 1.6 v gs = 10 v v gs = 0 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 0.1 10 100 1000 1 10 100 v gs = 0 v f = 1 mhz 10000 1000 c oss c rss c iss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 0.1 1000 100 10 1 1 10 100 v dd = 100 v v gs = 10 v r g = 10 w t r t f t d(off) t d(on) reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns 1 0.1 10 1 10 100 1000 100 di/dt = 50a / v gs = 0 v s m v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 5101520 200 150 100 50 0 2 4 6 0 i d = 8.0 a v dd = 160 v 100 v 40 v v dd = 160 v 100 v 40 v 8 10 12 14 16
data sheet d13331ej1v0ds00 5 2SK3108 derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 0 total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 40 30 20 10 0 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.1 1 1 10 100 10 100 1000 t c = 25 ?c single pulse r ds(on) limited 100 ms power dissipation limited 3 ms 10 ms 1 ms 100 m s pw = 10 m s i d(pulse) i d(dc) transient thermal resistance vs. pulse width pw - pulse width - s r th (t) - transient thermal resistance - ?c/w 10 0.01 0.1 1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 single pulse 10 m 100 m r th(ch-a) = 62.5 ?c /w r th(ch-c) = 5 ?c /w
data sheet d13331ej1v0ds00 6 2SK3108 single avalanche energy vs. inductive load l - inductive load - mh i as - single avalanche energy - a 0.1 1 10 100 10 1 0.01 v dd = 100 v v gs = 20 v 0 v r g = 25 w starting t ch = 25?c i as = 8.0 a e as = 51 mj single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy defrating factor - % 50 75 100 100 80 60 40 20 0 25 v dd = 100 v v gs = 20 v 0 v r g = 25 w i as 8.0 a 125 150
data sheet d13331ej1v0ds00 7 2SK3108 package drawing(unit : mm) isolated to-220 (mp-45f) 1.gate 2.drain 3.source 10.00.3 3.20.2 f 15.00.3 30.1 12.00.2 13.5 min. 40.2 0.70.1 1.30.2 1.50.2 2.54 typ. 2.54 typ. 123 2.50.1 0.650.1 4.50.2 2.70.2 source body diode gate protection diode gate drain equivalent circuit the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2SK3108 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
|
